Modeling on ammonothermal growth of GaN semiconductor crystals

The Ammonothermal Crystal Growth of Gallium Nitride - A Technique on the Up Rise

| Gallium nitride (GaN) is one of the most important wide band gap semiconductor materials in modern technology with even higher expectations for future applications it is ought to play a crucial role. Among this, the growth of lattice and thermally matched GaN substrates for the GaN device technology takes an essential piece. This paper is reporting on the achievements in the ammonothermal gro...

The Growth of Ternary Semiconductor Crystals Suitable for Device Applications

In general, the growth of I-Ill-Vlz and If-1V-V2 chalcopyrite-type crystals of suitable quality for device applications has been difficult. In some cases, the problem lies in not being able to produce large single crystal specimens, while in others the quality of the crystal is not adequate for the purposes intended. Techniques for both material synthesis and crystal growth of chalcopyrite comp...

Thermal Modeling of Extreme Heat Flux Microchannel Coolers for GaN-on-SiC Semiconductor Devices

Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) dissipate high power densities which generate hotspots and cause thermomechanical problems. Here, we propose and simulate GaN-based HEMT technologies that can remove power densities exceeding 30 kW/cm at relatively low mass flow rate and pressure drop. Thermal performance of the microcooler module is investigated by modeling both ...

Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

Chemistry of Ammonothermal Synthesis

Ammonothermal synthesis is a method for synthesis and crystal growth suitable for a large range of chemically different materials, such as nitrides (e.g., GaN, AlN), amides (e.g., LiNH2, Zn(NH2)2), imides (e.g., Th(NH)2), ammoniates (e.g., Ga(NH3)3F3, [Al(NH3)6]I3 · NH3) and non-nitrogen compounds like hydroxides, hydrogen sulfides and polychalcogenides (e.g., NaOH, LiHS, CaS, Cs2Te5). In parti...